DMBT2907A discrete semiconductors r dc components co., ltd. technical specifications of pnp epitaxial planar transistor description designed for general purpose switching and amplifier applications. pinning 1 = base 2 = emitter 3 = collector .091(2.30).067(1.70) sot-23 dimensions in inches and (millimeters) .063(1.60).055(1.40) .108(0.65).089(0.25) .045(1.15).034(0.85) .118(3.00) .110(2.80) .020(0.50).012(0.30) .0043(0.11) .0035(0.09) .004 (0.10) .051(1.30).035(0.90) .026(0.65).010(0.25) max .027(0.67).013(0.32) 2 1 3 characteristic symbol rating unit collector-base voltage vcbo -60 v collector-emitter voltage vceo -60 v emitter-base voltage vebo -5 v collector current ic -600 ma total power dissipation pd 225 mw junction temperature tj +150 oc storage temperature tstg -55 to +150 oc absolute maximum ratings(ta=25oc) characteristic symbol min typ max unit test conditions collector-base breakdown volatge bvcbo -60 - - v ic=-10ma collector-emitter breakdown voltage bvceo -60 - - v ic=-10ma emitter-base breakdown volatge bvebo -5 - - v ie=-10ma collector cutoff current icbo - - -20 na vcb =-50v icex - - -50 na vce =-30v, v eb(off)=-0.5v collector-emitter saturation voltage (1) vce(sat)1 - -0.2 -0.4 v ic=-150ma, ib=-15ma vce(sat)2 - -0.5 -1.6 v ic=-500ma, ib=-50ma base-emitter saturation voltage (1) vbe(sat)1 - - -1.3 v ic=-150ma, ib=-15ma vbe(sat)2 - - -2.6 v ic=-500ma, ib=-50ma hfe1 75 - - - ic=-0.1ma, vce=-10v hfe2 100 - - - ic=-1ma, vce=-10v dc current gain(1) hfe3 100 - - - ic=-10ma, vce=-10v hfe4 100 180 300 - ic=-150ma, vce=-10v hfe5 50 - - - ic=-500ma, vce=-10v transition frequency ft 200 - - mhz ic=-50ma, vcb =-20v, f=100mhz output capacitance cob - - 8 pf vcb =-10v, f=1mhz, ie=0 electrical characteristics(ratings at 25 oc ambient temperature unless otherwise specified) (1)pulse test: pulse width 380ms, duty cycle 2%
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